(China (Mainland))
Product Summary
The FDV301N is a N-Channel logic level enhancement mode field effect transistor. It is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The FDV301N has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET FDV301N can replace several different digital transistors, with different bias resistor values.
Parametrics
FDV301N absolute maximum ratings: (1)VDSS, VCC, Drain-Source Voltage, Power Supply Voltage: 25 V; (2)VGSS, VI, Gate-Source Voltage, VIN: 8 V; (3)ID, IO, Drain/Output Current - Continuous: 0.22 A, 0.5A; (4)PD, Maximum Power Dissipation: 0.35 W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃; (6)ESD, Electrostatic Discharge Rating: 6.0 kV; (7)RθJA, Thermal Resistance, Junction-to-Ambient: 357℃/W.
Features
FDV301N features: (1)25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON)= 5 Ω @ VGS= 2.7 V ; RDS(ON)= 4 Ω @ VGS= 4.5 V; (2)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V; (3)Gate-Source Zener for ESD ruggedness >6kV Human Body Model; (4)Replace multiple NPN digital transistors with one DMOS FET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDV301N |
Fairchild Semiconductor |
MOSFET N-Ch Digital |
Data Sheet |
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FDV301N_D87Z |
Fairchild Semiconductor |
MOSFET 25V N-Ch FET 4 Ohm |
Data Sheet |
Negotiable |
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FDV301N_NB9V005 |
Fairchild Semiconductor |
MOSFET N-Ch Digital Automotive Spec |
Data Sheet |
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FDV301N_Q |
Fairchild Semiconductor |
MOSFET N-Ch Digital |
Data Sheet |
Negotiable |
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