(China (Mainland))
Product Summary
The BFP740FE6327 is an NPN Silicon Germanium RF Transistor.
Parametrics
BFP740FE6327 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 4V atTA > 0℃; 3.5V at TA ≤0℃; (2)Collector-emitter voltage, VCES: 13V; (3)Collector-base voltage, VCBO: 13V; (4)Emitter-base voltage, VEBO: 1.2V; (5)Collector current, IC: 30 mA; (6)Base current, IB: 3mA; (7)Total power dissipation, TS ≤ 90℃, Ptot: 160 mW; (8)Junction temperature, Tj: 150℃; (9)Ambient temperature, TA: -65 to 150℃; (10)Storage temperature, Tstg: -65 to 150℃
Features
BFP740FE6327 features: (1)High gain ultra low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz; (5)High maximum stable gain Gms = 27.5 dB at 1.8 GHz; (6)Gold metallization for extra high reliability; (7)150 GHz fT-Silicon Germanium technology.
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